FQA70N15 datasheet, mosfet equivalent, Fairchild Semiconductor

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FQA70N15 Features and benefits

* 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A
* Low Gate Charge (Typ. 135 nC)
* Low Crss (Typ.135 pF)
* 100% Avalanche Tested
* 175°C Max.

FQA70N15 Application

Features
* 70 A, 100 V, RDS(on) = 28 mΩ (Max)@VGS = 10 V, ID = 35 A
* Low Gate Charge (Typ. 135 nC)
* Low .

FQA70N15 Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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